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TOSHIBA Field Effect Transistor K13A60D Silicon N-Channel MOS Type

TOSHIBA Field Effect Transistor K13A60D Silicon N-Channel MOS Type

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Regular price 57.82
Regular price 0.00 Sale price 57.82
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TOSHIBA K13A60D is a 600V Silicon N-Channel MOS Type. Until the voltage at the gate and terminal source exceed the minimal voltage cut in value, no current flows through the transistor. It is a through hole(THD) active component that consists of three terminals Gate, Drain, and Source. It is often used in switching regulator applications.

Datasheet

Features

  • Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (Typ.)
  • High forward transfer admittance: |YFs| = 6.5 S (typ.)
  • Low leakage current: IDSS = 10 μA (VDS = 600 V)
  • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA
Specifications
 Model K13A60D
 Brand TOSHIBA
 Transistor Polarity N-Channel
 Mounting Type Through Hole
 Drain-Source Voltage (VDSS) 600V
 Gate-Source Voltage (VGSS)
±30V
 DC Drain-Current (ID)
13A
 Pulse Drain-Current (IDP)
52A
 Drain Power Dissipation (PD)
50W
 Single Pulse Avalanche Energy (EAS)
511mJ
 Avalanche current (IAR)
13A
 Repetitive Avalanche Energy (EAR)
5.0mJ
 Channel Temperature (Tch)
150 °C
 Storage Temperature Range (TSTG)
-55~150 °C
Country of Origin China

T&C Apply.

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