MSF8N80 N-channel Enhanced-Mode MOSFET
MSF8N80 N-channel Enhanced-Mode MOSFET
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The MSF8N80 is an N-channel enhancement-mode MOSFET that provides the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness to the designer. The majority of electrons are found in the N-Channel, and their movement in the channel is responsible for the flow of current in the transistor. The ITO-220AB package is widely used in commercial and industrial applications. This latest technology was specifically designed to have low on-state resistance and high rugged avalanche characteristics. These devices are well suited for high-efficiency switch mode power supplies, active power factor correction, and half-bridge electronic lamp ballasts.
Applications
- Adaptor
- Switch mode power supply
Features
- RDS(on) @VGS=10V
- Gate Charge (Typical 39nC)
- Improved dv/dt capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150 degrees C)
- RoHS Compliant Package
Specifications
| Model | MSF8N80 |
| Brand | Bruckewell |
| Polarity Type | N-Channel |
| Drain-Source Voltage (VDSS) | 800V |
| Gate-Source Voltage (VGS) | ±30V |
| Continuous Drain-Current (ID) | 8A |
| Pulsed Drain-Current (IDM) | 32A |
| Single Pulsed Avalanche Energy (EAS) | 850mJ |
| Repetitive Avalanche Energy (EAR) | 17.8mJ |
| Mounting Type | Through Hole |
| Package | ITO220-AB |
| Country of Origin | China |
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