MITSUBISHI CT60AM-18F IGBT - 900V 60A High Voltage Current IGBT
MITSUBISHI CT60AM-18F IGBT - 900V 60A High Voltage Current IGBT
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The CT60AM-18F is an Insulated Gate Bipolar Transistor with a VCES of 900V, an IC of 60A, and an integrated fast-recovery diode. The VCE Saturation Voltage of the CT60AM-18F is low, and there is little tail loss.
Features
- VCES : 900 V
- IC : 60 A
- Integrated fast-recovery diode
Applications
- Microwave oven
- Electromagnetic cooking devices
- Rice-cookers
Specifications
| Model | CT60AM-18F |
| Brand | MITSUBISHI |
| Gate-emitter voltage | 25V |
| Peak gate-emitter voltage | 30V |
| Collector current | 60A |
| Collector current (Pulse) | 120A |
| Maximum Collector-Emitter Voltage |Vce| | 900V |
| Emitter current | 40A |
| Junction temperature | -40°C - +150°C |
| Package | TO3PL |
| Storage temperature |
-40°C - +150°C |
| Country of Origin | China |
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T&C Apply.
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