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K75T60 IGBT Fast Recovery Anti-Parallel Diode

K75T60 IGBT Fast Recovery Anti-Parallel Diode

First Come First Serve Offer (T&C Apply )

Regular price 181.30
Regular price 0.00 Sale price 181.30
Sale Sold out
Shipping calculated at checkout.

K75T60 is an IGBT fast recovery Anti-parallel diode, a switching device mainly used in switching applications. Its recovery time is too fast. Just because of the fast recovery, the switching speed is too fast. It's a lead-free device, as the IGBT is mainly used in switching applications like SMPS, UPS,  Snubber, welder and other general switching applications.

Features:

  • Maximum Junction Temperature 175 °C
  • Short circuit withstand time – 5us
  • Positive temperature coefficient in VCE(sat)
  • very tight parameter distribution
  • high ruggedness, temperature-stable behaviour
  • very high switching speed
  • Low EMI
  • Very soft, fast recovery
  • anti-parallel Em Con HE diode
  • (Qualified according to JEDEC1)for target applications
Specifications:
Part Number K75T60 
Type IGBT
Mounting Style Through Hole
Short Circuit withstand Time 5uS
Junction Temperature 175 Degree Centigrade
Package TO-247
Brand Infineon
Power 428W
Current 255A
Country of Origin China

T&C Apply.

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