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K120T60 IGBT Transistor 600V, 120A

K120T60 IGBT Transistor 600V, 120A

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240.10
0.00 240.10
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K120T60 is an Insulated Gate Bipolar Transistor. It is a Three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patterns with pulse width modulation (PWM). An IGBT is a fusion between a BJT and MOSFET. The symbol of the IGBT also represents the same, as you can see the input side represents a MOSFET with a Gate terminal and the output side represents a BJT with Collector and Emitter. The Collector and the Emitter are the conduction terminals and the gate is the control terminal with which the switching operation is controlled.

Features

  • Very low VCE(sat )1.5V(typ.)
  • Maximum junction temperature 175°C 
  • Short circuit withstand time 5µs
  • Very tight parameter distribution
  • High ruggedness,temperature stable behavior
  • High switching speed
  • Positive temperature coefficient in VCE(sat)
  • Low EMI
  • Low gate charge QG
  • Increased current capability
  • Very soft,fast recovery Anti-Parallel Emitter Controlled HE diode

Applications

  • General Purpose Inverters
  • Uninterruptible Power Supplies
  • Motordrivers
  • Medium To Low Switching Frequency Power Converters
Specifications 
Model  K120T60
Type IGBT Transistor
Package Type TO247
Collector-emitter voltage 600 V
Dc collector current 160 A @ 25°C
Diode forward current 160 A
Gate-emitter voltage ±20 V
Power Dissipation Tc=25°C 833.0 W
Gate-emitter leakage current  100 nA
DC collector current 120.0A
Country of Origin China

T&C Apply.

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