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IXFN48N50 IGBT DIODE

IXFN48N50 IGBT DIODE

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2,450.00
0.00 2,450.00
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The IXFN48N50 is a high-performance IGBT (Insulated Gate Bipolar Transistor) diode designed for power electronics applications. With a voltage rating of 500V and a current rating of 48A, it offers efficient switching capabilities. This diode is commonly used in inverters, motor drives, and other high-power electronic systems requiring reliable and robust performance.

Specifications:

  • Voltage Rating: 500V
  • Current Rating: 48A
  • Package Type: TO-247
  • Maximum Operating Temperature: 150°C
  • High-speed switching capability
  • Low saturation voltage
  • Suitable for high-power applications such as inverters and motor drives

T&C Apply.

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Following are the stock percentages available in the sale:

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Realme: 8%

OPPO: 10%

OnePlus: 4%

Apple: 4%

Poco: 2%

Infinix: 10%

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Tecno: 5% 

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  • Our standard shipping method is surface mode, which may result in longer delivery times. Typical delivery times range between 8-15 business days.

8. Acceptance of Terms

All products sold on a first-come, first-served basis are subject to our No Refund Policy. As part of this policy, the company will randomly select five customers out of every 100 orders to receive smartphone products. The remaining orders may be canceled, or the customer may opt to receive a branded T-shirt of equivalent value. If the customer objects to receiving a T-shirt or want for refund,

A full refund will be issued to their company-created digital wallet within 30 days. Please note that this offer is discretionary and involves a risk of non-receipt of the desired product. By placing an order, you acknowledge and agree to these terms."

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