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IRF3205 N-Channel Power MOSFET TO-220 Package - 55V 110A

IRF3205 N-Channel Power MOSFET TO-220 Package - 55V 110A

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34.57
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Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with a highly efficient and reliable device for use in various applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels of approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features

  •  Advanced Process Technology 
  • Ultra-Low On-Resistance 
  • Dynamic dv/dt Rating 
  • 175°C Operating Temperature 
  • Fast Switching 
  • Fully Avalanche Rated 
  • Lead-Free

Datasheet

Specifications 
Model IRF3205
Brand International Rectifier
Type of Transistor MOSFET
Type of Control Channel
N -Channel Maximum
No. of Pins 3
Maximum Power Dissipation (Pd)
150 W
Maximum Drain-Source Voltage |Vds| 55 V
Maximum Gate-Source Voltage |Vgs| 10V
Country of Origin China

T&C Apply.

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