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2SK1020 N-Channel Power MOSFET

2SK1020 N-Channel Power MOSFET

First Come First Serve Offer (T&C Apply )

Regular price 476.28
Regular price 0.00 Sale price 476.28
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2SK10120 is an N-Channel silicon power MOSFET, It is a Through-hole(THD) active component that consists of three terminals Gate, Drain, and Source. In N-Channel there is the majority of electrons. These electrons moving in the channel is accountable for the flow of current in the transistor.

Datasheet

Applications

  • Switching regulators
  • UPS
  • DC-DC converters
  • General purpose power amplifier

Features

  • High-speed switching
  • Low on-resistance
  • No secondary breakdown
  • Low driving power
  • High voltage
  • V(GSS) = ±30V
Specification
Model 2SK1020
Brand Fuji Electric
Type  N-Channel MOSFET
Drain-source voltage (Vdss) 500V
Continuous drain current (Id) 30A
Pulsed drain current (Id pulse) 92A
Continuous reverse drain current (Idr) 30A
Gate-source peak voltage (Vgss) ±30V
Max. power dissipation (Pd) 300W
Operating junction temperature  150 (degree C)
Storage temperature range -55~150 (degree C)
Country of Origin China

T&C Apply.

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Following are the stock percentages available in the sale:

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Realme: 8%

OPPO: 10%

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Apple: 4%

Poco: 2%

Infinix: 10%

Feature Phones: 32%

Tecno: 5% 

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8. Acceptance of Terms

All products sold on a first-come, first-served basis are subject to our No Refund Policy. As part of this policy, the company will randomly select five customers out of every 100 orders to receive smartphone products. The remaining orders may be canceled, or the customer may opt to receive a branded T-shirt of equivalent value. If the customer objects to receiving a T-shirt or want for refund,

A full refund will be issued to their company-created digital wallet within 30 days. Please note that this offer is discretionary and involves a risk of non-receipt of the desired product. By placing an order, you acknowledge and agree to these terms."

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