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20N60C3 45A, 600V N- Channel IGBT

20N60C3 45A, 600V N- Channel IGBT

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20N60C3 is an UFS N- channel Isolated gate bipolar transistor its member of MOS family its a switching device this device has high input impedance and low on state conduction loss it has less voltage drop. This device is ideally used for switching applications and operating at moderate frequency where low conduction losses are essential, its mostly used for conduction activities where the losses and frequency transmission is low, its used to control motors.

Features

  • This IC shows high peak current capability

  • Low conduction loss

  • Power dissipation at optimum temperature is 25 centigrade

  • Fall time is less than 180nS

  • Its mostly uses in short circuit switching devices

Specification
Model 20N60C3
Type MOSFET
Package TO-247
Maximum operating voltage 600V
Maximum temperature for soldering 300°C
Short circuit withstand time 4 microsecond
Total power dissipation 164W
Operating and Storage Temperature Range -55°C TO 150°C
Country of Origin China

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