20N60A4D MOSFET
20N60A4D MOSFET
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A high voltage switching device with MOS gate that combines the finest qualities of MOSFETs and bipolar transistors is called 20N60A4D. This device combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25 and 150°C, the significantly smaller on-state voltage loss scarcely varies somewhat. The IGBT being used is a TA49339 development type. The development type TA49372 diode is utilized in anti-parallel. It has designed by Fairchild. This IGBT is perfect for a variety of high voltage switching applications that operate at high frequencies and require minimal conduction losses. This gadget is designed to work with high frequency switch mode power supply.
Features
- >100 kHz Operation 390 V, 20 A
- 200 kHz Operation 390 V, 12 A
- 600 V Switching SOA Capability
-
Typical Fall Time 55 ns at TJ= 125°C
- Low Conduction Loss
- Its a lead free device
Applications
- Fast switching operations
- UPS
- SMPS
Pinout:-
1: Gate, 2: Collector, 3: Emitter
Specification
Product | 20N60A4D |
Brand | Fairchild |
Type | Hyper fast diode |
Mounting Type | Through hole |
Pins | 3 |
Maximum operating voltage | 600V |
Package |
TO-247−3LD
|
Power dissipation | 260W |
Maximum lead temperature | 260°C |
Fall time | 55nS |
Frequency | 200KHz |
Junction Temperature | 125 Degree C |
Country of Origin | China |
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T&C Apply.
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