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11N120CND 43A, 1200V MOSFET

11N120CND 43A, 1200V MOSFET

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The Non-Punch Through (NPT) IGBT design is the HGTG11N120CND. This IGBT belongs to the family of MOS-gate high voltage switches. IGBTs combine the some elements ,bipolar transistors and MOSFETs. This device combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. The IGBT in use is a TA49291 development type. The diode is a TA49189 development type. This MOSFET is ideal for many switching circuits, power supplies, power switching circuit, motor controls , AC and DC motor controls Etc.

Features

  • 43A, 1200V, TC = 25°C

  • 1200V Switching SOA Capability

  • Typical  fall time is 340nS

  • Low conduction loss

  • Junction temperature is 150°C
Specification
Model 11N120CND
Type IGBT MOSFET
Package TO-247
Maximum lead temperature  260°C
Collector to emitter voltage 1200V
Current rise time 16nS
Total power dissipation 298W
Operating and Storage Temperature Range -55°C TO 150°C
Country of Origin China

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