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FQPF4N80 2A,800V N-Channel MOSFET

FQPF4N80 2A,800V N-Channel MOSFET

First Come First Serve Offer (T&C Apply )

18.82
0.00 18.82
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FQPF4N80 2A,800V N-CHANNEL enhancement mode power field effect transistors were created  the exclusive planar stripe DMOS process developed by Fairchild.
In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. The high efficiency switch mode power supply is ideal for these devices.

Features

  • Maximum operating voltage is 800V

  • Its forward current is 2A

  • Avalanche tested is 100% 

  • Its used in fast switching applications

  • Improved dv/dT capability
  • Low gate charge is 19nC 
Specification
Model FQPF4N80
Type N-Channel MOSFET
Package TO-220F
Forward current 2A
Maximum lead temperature for soldering 300°C
Avalanche current 2.2A
Total power dissipation 43W
Operating and Storage Temperature Range -55°C TO 150°C
Country of Origin China

T&C Apply.

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